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| 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEO V CEV V CBO V EBO IC I CM IB I BM P tot T stg Tj Parameter 2N3771 Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Base Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature 40 50 50 5 30 30 7.5 15 150 -65 to 200 200 Value 2N3772 60 80 100 7 20 30 5 15 V V V V A A A A W o o Unit C C June 1997 1/4 2N3771/2N3772 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions for 2N3771 V CB = 50 V for 2N3772 V CB = 100 V for all V CB = 30 V T j = 150 o C for 2N3771 for 2N3772 for 2N3771 for 2N3772 for 2N3771 for 2N3772 I C = 0.2 A for 2N3771 for 2N3772 I C = 0.2 A for 2N3771 for 2N3772 I C = 0.2 A for 2N3771 for 2N3772 for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A for 2N3771 I C = 15 A for 2N3772 I C = 10 A for 2N3771 I C = 15 A I C = 30 A for 2N3772 I C = 10 A I C = 20 A IC = 1 A IC = 1 A IB = 1.5 A IB = 6 A IB = 1 A IB = 4 A VCE = 4 V VCE = 4 A VCE = 4 V VCE = 4 V VCE = 4 V VCE = 4 V VCE = 4 V VCE = 4 V f = 1 KHz f = 50 KHz 15 5 15 5 40 0.2 6 MHz A R BE = 100 50 80 45 70 2 4 1.4 4 2.7 2.7 60 V V V V V V V V V V V CB = 30 V V CB = 50 V V CB = 50 V V CB = 100 V V CB = 5 V V CB = 7 V 40 60 Min. Typ. Max. 2 5 10 10 10 4 5 5 5 Unit mA mA mA mA mA mA mA mA mA V V I CEO I CBO I EBO V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CEV(sus) Collector-Emitter Sustaining Voltage (V EB = -1.5V) V CER(sus) Collector-Emitter Sustaining Voltage (R BE = 100 ) V CE(sat) Collector-Emitter Saturation Voltage V BE Base-Emitter Voltage h FE DC Current Gain 60 h FE fT I s/b Small Signal Current Gain Transition frequency Second Breakdown Collector Current V CE = 25 V t = 1 s (non repetitive) Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/4 2N3771/2N3772 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E 2N3771/2N3772 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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